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(Datasheet) FDMS3604AS

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FDMS3604AS pdf
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3604AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
25
20
15
10
5
0
-5
0
didt = 300 A/μs
50 100
TIME (ns)
150
200
10-2 TJ = 125 oC
10-3
TJ = 100 oC
10-4
10-5
10-6
0
TJ = 25 oC
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 27. FDMS3604AS SyncFET body
diode reverse recovery characteristic
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
©2011 Fairchild Semiconductor Corporation
FDMS3604AS Rev.C4
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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