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FDMS3602AS Datasheet
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FDMS3602AS pdf
Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
100
80
60
40
20
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 14. On- Region Characteristics
8
VGS = 3 V
6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
4
VGS = 4 V
2
VGS = 4.5 V VGS = 10 V
0
0 20 40 60 80 100
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 26 A
VGS = 10 V
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
12
10
8
6
4
2
0
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 26 A
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 17. On-Resistance vs Gate to
Source Voltage
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
TJ = 125 oC
60
TJ = 25 oC
40
20
TJ = -55 oC
0
1.5 2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
©2011 Fairchild Semiconductor Corporation
FDMS3602AS Rev.C4
7
200
100 VGS = 0 V
TJ = 125 oC
10
1 TJ = 25 oC
0.1
0.0
TJ = -55 oC
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
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