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FDMS3602AS Datasheet

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FDMS3602AS pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS = 0 V, IS = 15 A
VGS = 0 V, IS = 26 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 15 A, di/dt = 100 A/s
Q2
IF = 26 A, di/dt = 300 A/s
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
0.8 1.2
V
21
28
34
44
ns
6.6
28
13
44
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a. 57 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 125 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
4. EAS of 50 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 10 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 15 A.
5. EAS of 144 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 17 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 25 A.
©2011 Fairchild Semiconductor Corporation
FDMS3602AS Rev.C4
3
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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