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FDMS3602AS Datasheet

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FDMS3602AS pdf
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3602AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
30
25
20
di/dt = 300 A/μs
15
10
5
0
-5
0 50 100 150 200 250
TIME (ns)
Figure 27. FDMS3602AS SyncFET body
diode reverse recovery characteristic
10-2
TJ = 125 oC
10-3
TJ = 100 oC
10-4
10-5 TJ = 25 oC
10-6
0
5 10 15 20
VDS, REVERSE VOLTAGE (V)
25
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage
©2011 Fairchild Semiconductor Corporation
FDMS3602AS Rev.C4
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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