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FDMS3600AS Datasheet
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FDMS3600AS pdf
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unless otherwise noted
10
ID = 30 A
8
6
4
2
VDD = 10 V
VDD = 13 V
VDD = 16 V
0
0 10 20 30 40 50 60
Qg, GATE CHARGE (nC)
Figure 20. Gate Charge Characteristics
10000
1000
Ciss
Coss
100 Crss
f = 1 MHz
VGS = 0 V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 21. Capacitance vs Drain
to Source Voltage
25
40
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.01
0.1 1 10
tAV, TIME IN AVALANCHE (ms)
100 300
Figure 22. Unclamped Inductive
Switching Capability
200
RθJC = 2 oC/W
150
VGS = 10 V
100
VGS = 4.5 V
50
Limited by Package
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 23.Maximun Continuous Drain
Current vs Case Temperature
200
100
10 1 ms
10 ms
THIS AREA IS
1 LIMITED BY rDS(on)
100 ms
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 120 oC/W
TA = 25 oC
0.01
0.01
0.1
1
1s
10s
DC
10 100200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe
Operating Area
10000
1000
100
SINGLE PULSE
RθJA = 120 oC/W
TA = 25 oC
10
1
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 25. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDMS3600AS Rev.C3
8
www.fairchildsemi.com

FDMS3600AS Datasheet PDF



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