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FDMS3600AS Datasheet

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FDMS3600AS pdf
Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
100
80
60
40
20
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 14. On-Region Characteristics
4
3 VGS = 3 V
2 VGS = 3.5 V VGS = 4 V VGS = 4.5 V
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0 20 40 60
ID, DRAIN CURRENT (A)
VGS = 10 V
80 100
Figure 15. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 30 A
VGS = 10 V
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs Junction Temperature
8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
6
ID = 30 A
4
TJ = 125 oC
2
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs Gate to
Source Voltage
10
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
VDS = 5 V
TJ = 125 oC
60
TJ = 25 oC
40
20
0
1.0
TJ = -55 oC
1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 18. Transfer Characteristics
200
100 VGS = 0 V
TJ = 125 oC
10
TJ = 25 oC
1
TJ = -55 oC
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2011 Fairchild Semiconductor Corporation
FDMS3600AS Rev.C3
7
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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