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FDMS3600AS Datasheet

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FDMS3600AS pdf
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
40
VGS = 10 V
VGS = 4.5 V
30
VGS = 4 V
VGS = 3.5 V
20
10
0
0.0
VGS = 3 V PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 1. On Region Characteristics
6
PULSE DURATION = 80 μs
5 DUTY CYCLE = 0.5% MAX
VGS = 3 V
4
3
VGS = 3.5 V
2 VGS = 4 V VGS = 4.5 V
1
VGS = 10 V
0
0 10 20 30 40
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 15 A
1.4 VGS = 10 V
1.2
25
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
20
ID = 15 A
15
1.0 10 TJ = 125 oC
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
VDS = 5 V
20
TJ = 150 oC
10
0
1
TJ = 25 oC
TJ = -55 oC
23
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
40
VGS = 0 V
10
TJ = 150 oC
1
0.1
TJ = 25 oC
TJ = -55 oC
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2011 Fairchild Semiconductor Corporation
FDMS3600AS Rev.C3
4
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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