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FDMS3600AS Datasheet

MOSFET

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FDMS3600AS pdf
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3600AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
35
30
25
20
didt = 300 A/μs
15
10
5
0
-5
0 50 100 150 200 250 300
TIME (ns)
10-2
10-3
10-4
10-5
10-6
0
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
5 10 15 20
VDS, REVERSE VOLTAGE (V)
25
©2011 Fairchild Semiconductor Corporation
FDMS3600AS Rev.C3
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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