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FDML7610S Datasheet

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Typical Characteristics (Q2 N-Channel) TJ = 25 oC unlenss otherwise noted
40
VGS = 10 V
30
VGS = 4.5 V
VGS = 4 V
20
VGS = 3.5 V
10
0
0.0
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8
Figure 13. On-Region Characteristics
6
PULSE DURATION = 80 μs
5 DUTY CYCLE = 0.5% MAX
VGS = 3 V
4
3
VGS = 3.5 V
2
1
VGS = 4 V
VGS = 4.5 V VGS = 10 V
0
0 10 20 30 40
ID, DRAIN CURRENT (A)
Figure 14. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
ID = 17 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 15. Normalized On-Resistance
vs Junction Temperature
20
ID = 17 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
15
10
TJ = 125 oC
5
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 16. On-Resistance vs Gate to
Source Voltage
10
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30 VDS = 5 V
TJ = 125 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
1.5 2.0 2.5 3.0 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. Transfer Characteristics
40
VGS = 0 V
10
TJ = 125 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 18. Source to Drain Diode
Forward Voltage vs Source Current
1.2
©2013 Fairchild Semiconductor Corporation
FDML7610S Rev.C1
7
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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