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FDML7610S Datasheet
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FDML7610S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
10
ID = 12 A
8
6
4
2
VDD = 10 V
VDD = 15 V
VDD = 20 V
0
0 5 10 15 20
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
2000
1000
Ciss
Coss
100
f = 1 MHz
Crss
VGS = 0 V
10
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. Capacitance vsDrain
to Source Voltage
60
VGS = 10 V
40
VGS = 4.5 V
20 Limited by Package
RθJC = 4 oC/W
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
Figure 9. Maximum Continuous Drain Current vs
Case Temperature
1000
100
100
100us
10
1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
SINGLE PULSE
0.1 TJ = MAX RATED
RθJA = 150 oC/W
TA = 25 oC
0.01
0.01 0.1
1
1s
10s
DC
10 100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 10. Forward Bias Safe Operating Area
SINGLE PULSE
RθJA = 150 oC/W
TA = 25 oC
10
1
0.5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (s)
10
Figure 11. Single Pulse Maximum Power Dissipation
©2013 Fairchild Semiconductor Corporation
FDML7610S Rev.C1
5
100 1000
www.fairchildsemi.com

FDML7610S Datasheet PDF



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