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FDML7610S Datasheet
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FDML7610S pdf
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode
Forward Voltage
VGS = 0 V, IS = 12 A
VGS = 0 V, IS = 17 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 12 A, di/dt = 100 A/μs
Q2
IF = 17 A, di/dt = 300 A/μs
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
0.8 1.2
27 43
35 56
10 18
40 64
V
ns
nC
Notes:
1: RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 56 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 150 °C/W when mounted on a
minimum pad of 2 oz copper
d. 140 °C/W when mounted on a
minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2013 Fairchild Semiconductor Corporation
FDML7610S Rev.C1
3
www.fairchildsemi.com

FDML7610S Datasheet PDF



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