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FDML7610S Datasheet

MOSFET

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FDML7610S pdf
Typical Characteristics (continued)
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 25 shows the reverse recovery
characteristic of the FDML7610S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
20
15
di/dt = 300 A/μs
10
5
0
-5
0 50 100 150 200 250
TIME (ns)
Figure 25. FDML7610S SyncFETTM body
diode reverse recovery characteristic
10000
1000
100
TJ = 125 oC
TJ = 100 oC
10
TJ = 25 oC
1
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)
Figure 26. SyncFETTM body diode reverse
leakage versus drain-source voltage
©2013 Fairchild Semiconductor Corporation
FDML7610S Rev.C1
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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