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(Datasheet) FDMC8200S

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FDMC8200S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 6 A
8
VDD = 15 V
6
VDD = 10 V
4
VDD = 20 V
2
0
0246
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
8
1000
100
Ciss
Coss
Crss
f = 1 MHz
VGS = 0 V
10
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure8. CapacitancevsDrain
to Source Voltage
8
7
6
5
4
TJ = 25 oC
3
TJ = 100 oC
2
TJ = 125 oC
1
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
7
25
20
15
Limited by Package
10
5
RθJC = 7.5 oC/W
VGS = 10 V
VGS = 4.5 V
0
25 50 75 100 125
Tc, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
150
15000
1100
10100u0sus
1 ms
1
1
1 m10sms
THTIHSISARAERAEAISIS
0.1 LIMLIIMTEITDEDBYBYrDrSD(Son(o)n)
101m00s ms
1010 sms
0.1
0.01
0.01
SINGLE PULSSIENGLE PULSE
TJ = MAX RATTJE=DMAX RATED
RθJA = 180 oCR/θWJA = 125 oC/W
TC = 25 oC TA = 25 oC
1 s10 s
10DsC
DC
0.0001.01
0.1
1
10 100200
0.01
0.1 1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
VDS, DRAIN to SOURCE VOLTAGE (V)
100200
Figure 11. Forward Bias Safe
Operating Area
100
VGS = 10 V
10
1
0.1
0.001
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
0.01 0.1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 12. Single Pulse Maximum
Power Dissipation
©2011 Fairchild Semiconductor Corporation
FDMC8200S Rev.C4
5
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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