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FDMC8200S Datasheet

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FDMC8200S pdf
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
40
VGS = 10 V
VGS = 6 V
30 VGS = 4.5 V
20
VGS = 4 V
10
0
0.0
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5 2.0 2.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
3.0
Figure 1. On Region Characteristics
4
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
VGS = 3.5 V
VGS = 4 V
2
VGS = 4.5 V
1
VGS = 6 V VGS = 10 V
0
0 10 20 30 40
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 6 A
VGS = 10 V
1.4
1.2
1.0
0.8
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
ID = 6 A
60
TJ = 125 oC
40
20
TJ = 25 oC
0
2468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
10
40
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
30
VDS = 5 V
20
10
0
2.0
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
Figure 5. Transfer Characteristics
40
VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.2
0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMC8200S Rev.C4
4
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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