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(Datasheet) FDMC8200S

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FDMC8200S pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VGS = 0 V, IS = 6 A
(Note 2)
VSD
Source-Drain Diode Forward Voltage VGS = 0 V, IS = 8.5 A
(Note 2)
VGS = 0 V, IS = 1.3 A
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 6 A, di/dt = 100 A/s
Q2
IF = 8.5 A, di/dt = 300 A/s
Q1
Q2
Q2
Q1
Q2
Q1
Q2
0.8 1.2
0.8 1.2
0.6 0.8
V
13
20
24
32
ns
2.3
15
10
24
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a.65 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 180 °C/W when mounted on a
minimum pad of 2 oz copper
d. 125 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3.Starting Q1: T = 25 °C, L = 1 mH, I = 5 A, Vgs = 10V, Vdd = 27V, 100% test at L = 3 mH, I = 4 A; Q2: T = 25°C, L = 1 mH, I = 8 A, Vgs = 10V, Vdd = 27V,
100% test at L = 3 mH, I = 3.2 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMC8200S Rev.C4
3
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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