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FDMC8200S Datasheet

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FDMC8200S datasheet pdf
Typical Characteristics (continued)
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverses recovery
characteristic of the FDMC8200S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
7
6
5
4
3 di/dt = 300 A/μs
2
1
0
-1
-2
0 20 40 60 80 100
TIME (ns)
Figure 27. FDMC8200S SyncFET body
diode reverse recovery characteristic
0.01
0.001
0.0001
TJ = 125 oC
TJ = 100 oC
0.00001
0.000001
0
TJ = 25 oC
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 28. SyncFET body diode reverses
leakage versus drain-source voltage
©2011 Fairchild Semiconductor Corporation
FDMC8200S Rev.C4
10
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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