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FDMC8200 Datasheet

N-Channel MOSFET

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FDMC8200 pdf
FDMC8200
June 2009
Dual N-Channel PowerTrench® MOSFET
30 V, 9.5 mand 20 m
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 20 mat VGS = 10 V, ID = 6 A
„ Max rDS(on) = 32 mat VGS = 4.5 V, ID = 5 A
Q2: N-Channel
„ Max rDS(on) = 9.5 mat VGS = 10 V, ID = 9 A
„ Max rDS(on) = 13.5 mat VGS = 4.5 V, ID = 7 A
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual Power33 (3mm x 3mm MLP) package. The switch node
has been internally connected to enable easy placement and
routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous MOSFET (Q2) have been
designed to provide optimal power efficiency.
Applications
„ Mobile Computing
„ Mobile Internet Devices
„ General Purpose Point of Load
Pin 1
D1
D1
D1
G1
D1
D2/S1
S2
S2
S2
G2
VIN
VIN VIN
GHS
VIN
SWITCH
NODE
GND GND GND
GLS
S2 5
S2 6
S2 7
G2 8
Q2
Q1
BOTTOM
BOTTOM
Power 33
www.DataSheet4U.com
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package limited)
- Continuous (Silicon limited)
- Continuous
- Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
TC = 25 °C
TC = 25 °C
TA = 25 °C
TA = 25 °C
TA = 25 °C
Q1 Q2
30 30
±20 ±20
18 18
23 45
8 1a 12 1b
40
1.9 1a
0.7 1c
40
2.2 1b
0.9 1d
-55 to +150
RθJA
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
65 1a
180 1c
7.5
55 1b
145 1d
4
4 D1
3 D1
2 D1
1 G1
Units
V
V
A
W
°C
°C/W
Device Marking
FDMC8200
Device
FDMC8200
Package
Power 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMC8200 Rev.A1
1
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor



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