Single P-Channel, Logic Level, PowerTrenchTM MOSFET
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
-4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V
RDS(ON) = 0.075 Ω @ VGS = -4.5 V.
Low gate charge (8nC typical).
High performance trench technology for extremely low
SuperSOTTM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SuperSOT TM -6 pin 1 D
Absolute Maximum Ratings
VDSS Drain-Source Voltage
TA = 25°C unless otherwise note
VGSS Gate-Source Voltage - Continuous
ID Drain Current - Continuous
PD Maximum Power Dissipation
TJ,TSTG Operating and Storage Temperature Range
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC Thermal Resistance, Junction-to-Case (Note 1)
-55 to 150
© 1999 Fairchild Semiconductor Corporation