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FCD2250N80Z Datasheet

MOSFET

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FCD2250N80Z pdf
December 2014
FCD2250N80Z
N-Channel SuperFET® II MOSFET
800 V, 2.6 A, 2.25
Features
• RDS(on) = 1.8 Typ.)
• Ultra Low Gate Charge (Typ. Qg = 11 nC)
• Low Eoss (Typ. 1.1 uJ @ 400V)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 51 pF)
• 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching
performance, dv/dt rate and higher avalanche energy. Conse-
quently, SuperFET II MOSFET is very suitable for the switch-
ing power applications such as Audio, Laptop adapter, Lighting,
ATX power and industrial power applications.
• AC - DC Power Supply
• LED Lighting
D
G
S
D
D-PAK
G
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
S
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2014 Fairchild Semiconductor Corporation
FCD2250N80Z Rev. C0
1
FCD2250N80Z
800
±20
±30
2.6
1.7
6.5
21.6
0.52
0.39
100
20
39
0.31
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCD2250N80Z
3.2
100
Unit
oC/W
www.fairchildsemi.com
Fairchild Semiconductor
Fairchild Semiconductor


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