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F1200A Datasheet

Fast Silicon Rectifiers

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F1200A pdf
Fast Silicon Rectifiers
Version 2004-04-06
Ø 8 ±0.1
Type
Ø 1.2 ±0.05
Dimensions / Maße in mm
F1200A, F1200D
Schnelle Silizium Gleichrichter
Nominal current – Nennstrom
12 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50V, 200 V
Plastic case
Kunststoffgehäuse
Ø 8 x 7.5 [mm]
P-600 Style
Weight approx. – Gewicht ca.
1.5 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Type
Typ
F1200A
F1200D
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
200
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25°C
Peak forward surge current, 60 Hz half sine-wave
Stoßstrom für eine 60 Hz Sinus-Halbwelle
TA = 25°C
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
IFAV 12 A 1)
IFRM 80 A 1)
IFSM 375 A
IFSM 390 A
i2t 680 A2s
Tj – 50…+150°C
TS – 50…+175°C
1) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
1
Diotec Semiconductor
Diotec Semiconductor



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