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F11NM60N Datasheet

STF11NM60N

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F11NM60N pdf
STD11NM60N - STD11NM60N-1
STP11NM60N - STF11NM60N
N-channel 600V - 0.37- 10A - TO-220 - TO-220FP- IPAK - DPAK
Second generation MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STD11NM60N
STD11NM60N-1
STF11NM60N
STP11NM60N
650V
650V
650V
650V
<0.45
<0.45
<0.45
<0.45
10A
10A
10A (1)
10A
1. Limited only by maximum temperature allowed
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
Switching application
3
2
1
TO-220
3
2
1
IPAK
3
1
DPAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STD11NM60N-1
STD11NM60N
STP11NM60N
STF11NM60N
Marking
D11NM60N
D11NM60N
P11NM60N
F11NM60N
Package
IPAK
DPAK
TO-220
TO-220FP
Packaging
Tube
Tape & reel
Tube
Tube
November 2006
Rev 2
1/17
www.st.com
17
Free Datasheet http://www.datasheetlist.com/
ST Microelectronics
ST Microelectronics



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