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F11N60F Datasheet

FCPF11N60F

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SuperFETTM
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.32
• Fast Recovery Type ( trr = 120ns)
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff.=95pF)
• 100% avalanche tested
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
GDS
TO-220
Absolute Maximum Ratings
GD S
TO-220F
D
!
"
!"
G!
"
"
!
S
Symbol
Parameter
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60F FCPF11N60F
11 11 *
7 7*
33 33 *
± 30
340
11
12.5
4.5
125 36 *
1.0 0.29 *
-55 to +150
300
Units
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FCP11N60F
1.0
0.5
62.5
FCPF11N60F
3.5
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FCP11N60F/FCPF11N60F Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/
Fairchild Semiconductor
Fairchild Semiconductor



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