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F10N65 Datasheet

PJF10N65

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PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, RDS(ON)=1.0@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
2
S
1D
G
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE
PJP10N65
MARKING
P10N65
PJF10N65
F10N65
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol PJP10N65 PJF10N65
Drain-Source Voltage
VDS 650
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 10
10
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TA= 2 5 OC
IDM
PD
40
156
1.25
40
50
0.4
Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e
Avalanche Energy with Single Pulse
IAS=10A, VDD=90V, L=13mΗ
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
-55 to +150
750
0.8 2.5
Junction-to Ambient Thermal Resistance
Note : 1. Maximum DC current limited by the package
RθJA
62.5
100
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1
Pan Jit International
Pan Jit International



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