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F10N60 Datasheet

PJF10N60

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F10N60 pdf
PJP10N60 / PJF10N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, RDS(ON)=1.0@VGS=10V, ID=5.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
1
2
GD
S
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
INTERNAL SCHEMATIC DIAGRAM
Drain
TYPE
PJP10N60
PJF10N60
MARKING
P10N60
F10N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
Symbol PJP10N60 PJF10N60
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS +30
Continuous Drain Current
ID 1 0
10
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TA= 2 5 OC
IDM
PD
40
156
1.25
40
50
0.4
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
IAS=10A, VDD=50V, L=10mH
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
-55 to +150
500
0.8 2.5
Junction-to Ambient Thermal Resistance
RθJA
62.5
100
Note: 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE
March 31,2010-REV.00
PAGE . 1
http://www.Datasheet4U.com
Pan Jit International
Pan Jit International



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