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EMFA0P02J Datasheet

Field Effect Transistor

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EMFA0P02J pdf
 
 
PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
20V 
D
RDSON (MAX.) 
100mΩ 
ID 
3.4A 
G
 
 S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 70 °C 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
 
 
2015/7/22 
 
EMFA0P02J
LIMITS 
±12 
3.4 
2.4 
14 
1.25 
0.8 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
100 
UNIT 
°C / W 
p.1 
Excelliance MOS
Excelliance MOS



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