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EMF50N03M Datasheet

Field Effect Transistor

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EMF50N03M pdf
 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
50mΩ 
ID  2.2A  G
 
 S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 70 °C 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoAmbient 
RJA 
JunctiontoLead 
RJL 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
 
 
2013/3/15 
EMF50N03M
LIMITS 
±12 
2.2 
1.65 
14 
0.29 
0.19 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
425 
320 
UNIT 
°C / W 
 
p.1 
Excelliance MOS
Excelliance MOS



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