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EMF09P02A Datasheet

Field Effect Transistor

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EMF09P02A pdf
 
 
PChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
20V 
D
RDSON (MAX.) 
9mΩ 
ID 
62A 
G
 
 S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=25A, RG=25Ω
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
2015/9/10 
EMF09P02A
LIMITS 
±8 
62 
41 
150 
25 
62.5 
31.25 
56 
22 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
2.2 
62.5 
UNIT 
°C / W 
p.1 
Excelliance MOS
Excelliance MOS



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