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E180NE10 Datasheet

STE180NE10

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® STE180NE10
N-CHANNEL 100V - 4.5 m- 180A ISOTOP
STripFETPOWER MOSFET
TYPE
V DSS
RDS(on)
STE180NE10
100 V < 6 m
s TYPICAL RDS(on) = 4.5 m
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
ID
180 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulation Withstand Voltage (AC-RMS)
Ts tg Storage T emperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1999
Value
Un it
100 V
100 V
± 20
V
180 A
119 A
540 A
360
2. 88
W
W /o C
2500
-55 to 150
150
( 1) ISD 180 Α, di/dτ 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V
oC
oC
1/8
STMicroelectronics
STMicroelectronics



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