D44H Series (NPN),
D45H Series (PNP)
These series of plastic, silicon NPN and PNP power transistors can
be used as general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Pb−Free Packages are Available*
Emitter Base Voltage
− Peak (Note 1)
VEB 5.0 Vdc
Total Power Dissipation
@ TC = 25°C
@ TA = 25°C
Operating and Storage Junction
TJ, Tstg −55 to +150 °C
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient RqJA
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Width v 6.0 ms, Duty Cycle v 50%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 9
10 AMP COMPLEMENTARY
TRANSISTORS 60, 80 VOLTS
= Device Code
x = 4 or 5
yy = 8 or 11
= Assembly Location
= Work Week
= Pb−Free Package
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number: