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D12S60 Datasheet

SiC Schottky Diode

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D12S60 pdf
Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode
Revolutionary semiconductor
material - Silicon Carbide
Switching behavior benchmark
No reverse recovery
No temperature influence on
the switching behavior
No forward recovery
SDT12S60
thinQ!SiC Schottky Diode
Product Summary
VRRM
600
Qc 30
IF 12
V
nC
A
PG-TO220-2-2.
Type
SDT12S60
Package
Ordering Code
PG-TO220-2-2. Q67040-S4470
Marking Pin 1 Pin 2
D12S60 C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
RMS forward current, f=50Hz
IF
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
TC=25°C, tp=10ms
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms
Repetitive peak reverse voltage
IFRM
IFMAX
i2dt
VRRM
Surge peak reverse voltage
Power dissipation, TC=25°C
Operating and storage temperature
VRSM
Ptot
Tj , Tstg
Value
12
17
36
49
120
6.48
600
600
88.2
-55... +175
Unit
A
A²s
V
W
°C
Rev. 2.3
Page 1
2008-06-03
http://www.Datasheet4U.com
Infineon
Infineon



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