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D12NF06 Datasheet

STD12NF06

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STD12NF06
N-CHANNEL 60V - 0.08 - 12A IPAK/DPAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD12NF06
60 V
<0.1
12 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.08
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL , AUDIO AMPLIFIERS
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
December 2001
.
Value
60
60
± 20
12
8.5
48
30
0.2
15
140
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 12A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 6A, VDD = 30V
1/10
STMicroelectronics
STMicroelectronics



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