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D1274 Datasheet

2SD1274

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Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
s Features
q High collector to base voltage VCBO
q High-speed switching
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to
base voltage
2SD1274
2SD1274A
2SD1274B
VCBO
150
200
250
2SD1274
Collector to
2SD1274A
emitter voltage
2SD1274B
VCES
150
200
250
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
IC
PC
80
6
5
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Collector cutoff
current
2SD1274
2SD1274A
2SD1274B
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Fall time
Symbol
ICBO
VCEO(sus)*
VEBO
hFE
VBE
VCE(sat)
fT
tf
Conditions
VCB = 150V, IE = 0
VCB = 200V, IE = 0
VCB = 250V, IE = 0
IC = 0.2A, L = 25mH
IE = 1mA, IC = 0
VCE = 4V, IC = 5A
VCE = 4V, IC = 5A
IC = 5A, IB = 1A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 5A, IB1 = 0.8A, VEB = –5V
*VCEO(sus) Test circuit 60Hz
X
L 25mH
IC(A)
0.2
120
6V
Y
115V
G
0.1
80
min typ max Unit
1
1 mA
1
80 V
6V
14
1.5 V
1.6 V
40 MHz
1 µs
VCE(V)
1
Panasonic
Panasonic



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