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D1272 Datasheet

2SD1272

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D1272 pdf
Power Transistors
2SD1272
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
IB
PC
200
150
6
2.5
1
0.1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
IEBO
VCEO
hFE*
VCE(sat)
fT
VCB = 200V, IE = 0
VEB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.2A
IC = 0.5A, IB = 0.02A
VCE = 4V, IC = 0.1A, f = 10MHz
*hFE Rank classification
Rank
Q
P
hFE 500 to 1200 800 to 2000
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
100 µA
100 µA
150 V
500 2000
1V
25 MHz
1
Panasonic Semiconductor
Panasonic Semiconductor



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