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D1266 Datasheet

2SD1266

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D1266 pdf
Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB941 and 2SB941A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity
q Low collector to emitter saturation voltage VCE(sat)
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1266
base voltage 2SD1266A
VCBO
60
80
V
Collector to 2SD1266
emitter voltage 2SD1266A
VCEO
60
80
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
6
5
3
35
2
V
A
A
W
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
s Electrical Characteristics (TC=25˚C)
˚C
˚C
www.DataSheet.co.kr
Parameter
Symbol
Conditions
Collector cutoff
2SD1266
current
2SD1266A
Collector cutoff
2SD1266
current
2SD1266A
Emitter cutoff current
Collector to emitter 2SD1266
voltage
2SD1266A
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICES
ICEO
IEBO
VCEO
hFE1*
hFE2
VBE
VCE(sat)
fT
ton
tstg
tf
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
IC = 3A, IB = 0.375A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
*hFE1 Rank classification
Rank
Q
P
hFE1 70 to 150 120 to 250
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
200
µA
200
300
µA
300
1 mA
60
V
80
70 250
10
1.8 V
1.2 V
30 MHz
0.5 µs
2.5 µs
0.4 µs
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
1
Datasheet pdf - http://www.DataSheet4U.net/
Panasonic Semiconductor
Panasonic Semiconductor



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