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D1262A Datasheet

2SD1262A

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D1262A pdf
Power Transistors
2SD1262, 2SD1262A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Complementary to 2SB939 and 2SB939A
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High foward current transfer ratio hFE
q High-speed switching
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1262
base voltage 2SD1262A
VCBO
60
80
Collector to 2SD1262
emitter voltage 2SD1262A
VCEO
60
80
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
7
12
8
45
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1262
current
2SD1262A
Emitter cutoff current
ICBO
IEBO
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VEB = 7V, IC = 0
Collector to emitter voltage
VCEO
IC = 30mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCE = 3V, IC = 4A
VCE = 3V, IC = 8A
IC = 4A, IB = 8mA
IC = 4A, IB = 8mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 4A, IB1 = 8mA, IB2 = –8mA,
VCC = 50V
*hFE1 Rank classification
Rank
R
Q
P
hFE1 1000 to 2500 2000 to 5000 4000 to 10000
Internal Connection
B
min
60
80
1000
500
C
E
typ max Unit
100
µA
100
2 mA
V
10000
1.5 V
2V
20 MHz
0.5 µs
4 µs
1 µs
1
Panasonic
Panasonic



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