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D1254 Datasheet

2SD1254

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D1254 pdf
Power Transistors
2SD1254
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB931
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
130
80
7
6
3
30
1.3
Unit
V
V
V
A
A
W
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
s Electrical Characteristics (TC=25˚C)
˚C
˚C
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 100V, IE = 0
VEB = 5V, IC = 0
10 µA
50 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
80
V
Forward current transfer ratio
hFE1
hFE2*
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 0.5A
45
60 260
Collector to emitter saturation voltage VCE(sat)
IC = 2A, IB = 0.1A
0.5 V
Base to emitter saturation voltage VBE(sat)
IC = 2A, IB = 0.1A
1.5 V
Transition frequency
fT VCE = 10V, IC = 0.5A, f = 10MHz
30 MHz
Turn-on time
Storage time
Fall time
ton IC = 0.5A, IB1 = 50mA, IB2 = –50mA,
tstg
tf
VCC = 50V
0.5
2.5
0.15
µs
µs
µs
*hFE2 Rank classification
Rank
R
Q
hFE2 60 to 120 90 to 180
P
130 to 260
1
Free Datasheet http://www.Datasheet4U.com
Panasonic Semiconductor
Panasonic Semiconductor



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