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D1251 Datasheet

2SD1251

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D1251 pdf
Power Transistors
2SD1251, 2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q Wide area of safe operation (ASO)
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1251
base voltage 2SD1251A
VCBO
60
80
Collector to 2SD1251
emitter voltage 2SD1251A
VCEO
60
80
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
IB
PC
8
6
4
1
30
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1251
voltage
2SD1251A
ICBO
IEBO
VCEO(sus)*2
VCB = 20V, IE = 0
VEB = 8V, IC = 0
IC = 0.2A, L = 25mH
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
hFE1
hFE2*1
VBE
VCE(sat)
fT
VCE = 3V, IC = 0.1A
VCE = 3V, IC = 1A
VCE = 3V, IC = 1A
IC = 2A, IB = 0.4A
VCE = 10V, IC = 0.2A, f = 0.5MHz
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ max Unit
30 µA
1 mA
60
V
80
40
30 160
1.2 V
1V
1 MHz
*1hFE2 Rank classification
Rank
Q
P
hFE2 30 to 60 50 to 100
O
80 to 160
*2VCEO(sus) Test circuit
50/60Hz mercury relay
120
6V
1
X IC(A)
L 25mH 0.2
Y
15V
G
0.1
Note: Ordering can be made by the common rank (OP rank hFE2 = 50 to 160) in the rank classification.
60/80
VCE(V)
1
Panasonic Semiconductor
Panasonic Semiconductor



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