TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
Hammer Drive, Pulse Motor Drive Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
• Complementary to 2SB908.
Absolute Maximum Ratings (Ta = 25°C)
Ta = 25°C
Tc = 25°C
Storage temperature range
Tj 150 °C
−55 to 150
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
≈ 4.5 kΩ
≈ 300 Ω
Free Datasheet http://www.Datasheet4U.com