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TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)
2SD1221
2SD1221
Audio Frequency Power Amplifier Application
Unit: mm
Low collector saturation voltage
: VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
High power dissipation: PC = 20 W (Tc = 25°C)
Complementary to 2SB906
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 60 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 3 A
Base current
IB 0.5 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1.0
W
20
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-05-19
Toshiba
Toshiba



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