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D1220 Datasheet

2SD1220

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1220
2SD1220
Power Amplifier Applications
Unit: mm
Complementary to 2SB905
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
IB
PC
150 V
150 V
6V
1.5 A
1.0 A
1.0
W
10
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-02-05
Toshiba
Toshiba



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