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2SD1187

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1187
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Max.) @ IC= 6A
·High Power Dissipation
APPLICATIONS
·High power switching applications
·DC-DC converter and DC-AC inverter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 10 A
IBB Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
2A
80 W
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
Inchange Semiconductor
Inchange Semiconductor



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