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2SD1170

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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1170
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High DC Current Gain-
: hFE= 2000( Min.) @(IC= 3A, VCE= 2V)
·Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB=B 3mA)
APPLICATIONS
·Driver for solenoid,motor and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE UNIT
.iscsemVCBO
Collector-Base Voltage
120 V
wwwVCEO Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
6A
ICM Collector Current-Peak
10 A
IB Base Current-Continuous
Collector Power Dissipation
PC @TC=25
TJ Junction Temperature
Tstg Storage Temperature
1A
50 W
150
-55~150
isc Websitewww.iscsemi.cn
Inchange Semiconductor
Inchange Semiconductor



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