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Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD111
DESCRIPTION
·High Power Dissipation-
: PC= 100W@TC= 25
·High Current Capability-
: IC = 10A
APPLICATIONS
·Designed for power amplifier , power switching ,DC-DC
converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
80 V
10 V
IC Collector Current-Continuous
10 A
IE Emitter Current-Continuous
IB Base Current-Continuous
-10 A
3A
PC
Collector Power Dissipation @TC=25
100
W
TJ Junction Temperature
Tstg Storage Temperature
150
-65~150
isc websitewww.iscsemi.cn
1
INCHANGE
INCHANGE



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