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D10XB60H Datasheet

SILICON BRIDGE RECTIFIER

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D10XB60H pdf
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
D10XB60H
SILICON BRIDGE RECTIFIER
RBV4
PRV : 600 Volts
Io : 10 Amperes
FEATURES :
* Glass passivated junction chip
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
0.150 (3.8)
0.134 (3.4)
C3
0.996 (25.3)
0.189 (4.8)
0.972 (24.7)
0.173 (4.4)
+~~
0.303 (7.7)
0.287 (7.3)
0.075 (1.9)
0.060 (1.5)
0.043 (1.1)
0.035 (0.9)
0.114 (2.9)
0.098 (2.5)
0.032 (0.8)
0.043 (1.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Peak Reverse Voltage
Maximum Average Forward Current With heatsink, Tc = 112 °C
(50Hz Sine wave, R-load )
Without heatsink, Ta = 25 °C
Maximum Peak Forward Surge Current, Tj = 25 °C
(50Hz sine wave, Non-repetitive 1 cycle peak value)
Current Squared Time at 1ms t < 10 ms, TJ = 25 °C
Maximum Forward Voltage per Diode at IF = 5.0 A
( Pulse measurement, Rating of per diode)
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case, With heatsink
Maximum Thermal Resistance, Junction to Ambient, Without heatsink
Maximum Thermal Resistance, Junction to Lead, Without heatsink
Operating Junction Temperature
Storage Temperature Range
SYMBOL
VRM
IO
IFSM
I2t
VF
IR
RӨJC
RӨJA
RӨJL
TJ
TSTG
VALUE
600
10
2.9
170
110
1.05
10
1.9
26
6
150
- 40 to + 150
UNIT
V
A
A
A2S
V
μA
°C/W
°C/W
°C/W
°C
°C
Page 1 of 2
Rev. 00 : February 5, 2009
EIC
EIC



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