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D1094UK Datasheet

METAL GATE RF SILICON FET

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D1094UK pdf
MECHANICAL DATA
PIN 1
PIN 3
PIN 5
SOURCE
GATE
SOURCE
SOT 171
PIN 2
PIN 4
PIN 6
SOURCE
DRAIN
SOURCE
TetraFET
D1094UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
20W – 28V – 400MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 11 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
50W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current *
6A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 3/00
Seme LAB
Seme LAB



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