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D1093UK Datasheet

METAL GATE RF SILICON FET

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D1093UK pdf
MECHANICAL DATA
PIN 1
PIN 3
PIN 5
SOURCE
GATE
SOURCE
SOT 171
PIN 2
PIN 4
PIN 6
SOURCE
DRAIN
SOURCE
TetraFET
D1093UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 500MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
42W
BVDSS
Drain – Source Breakdown Voltage *
65V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
4A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
Seme LAB
Seme LAB



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