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D1082UK Datasheet

METAL GATE RF SILICON FET

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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
0.64
(0.025)
6.35
(0.250)
5.33
(0.210)
0.89
(0.035)
2 pls.
4
123
2.29
(0.090)
0.51
(0.020)
REF.
± 1˚
± 1˚
± 1˚
2.29
(0.090)
4.57
(0.180)
0.76
(0.030)
REF.
0.51
(0.020)
REF.
1.02
(0.040)
TO–251 PACKAGE
PIN 1 – GATE
PIN 2 – DRAIN
PIN 3 – SOURCE
PIN 4 – DRAIN
TetraFET
D1082UK
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
4W – 28V – 200MHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13dB MINIMUM
• SURFACE MOUNT
APPLICATIONS
LOW COST DC to 200 MHz
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
PD Power Dissipation
62.5W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
TSTG
Storage Temperature
–65 to 125°C
TJ Maximum Operating Junction Temperature
150°C
Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email rf@semelab.co.uk
Prelim. 7/96
Seme LAB
Seme LAB



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