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D1069 Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
DESCRIPTION
·High Collector Current Capability
·High Collector Power Dissipation Capability
·Built-in Damper Diode
APPLICATIONS
·TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300 V
VCEO Collector-Emitter Voltage
150 V
VEBO Emitter-Base Voltage
6V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation
Ta=25
PC
Collector Power Dissipation
TC=25
Tj Junction Temperature
Tstg Storage Ttemperature Range
2A
1.75
W
40
150
-55~150
isc Websitewww.iscsemi.cn
INCHANGE
INCHANGE



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