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METAL GATE RF SILICON FET

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D1053 pdf
TetraFET
D1053UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
B
A
A
DE
(2
C
pls)
2
3
4
5
1
98 76
K
O
(2 pls)
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
50W – 28V – 1GHz
PUSH–PULL
F
G
PIN 1
PIN 3
PIN 5
PIN 7
PIN 9
HJ
I
DB
SOURCE (COMMON)
DRAIN 2
DRAIN 4
GATE 3
GATE 1
PIN 2
PIN 4
PIN 6
PIN 8
MN
DRAIN 1
DRAIN 3
GATE 4
GATE 2
DIM mm
A 1.52
B 1.52
C 45°
D 16.38
E 6.35
F 18.41
G 12.70
H 5.08
I 24.76
J 1.52
K 0.81R
M 0.13
N 2.16
O 1.65R
Tol. Inches Tol.
0.13 0.060 0.005
0.13 0.060 0.005
5° 45° 5°
0.26 0.645 0.010
0.13 0.250 0.005
0.13 0.725 0.005
0.26 0.500 0.010
0.13 0.200 0.005
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
0.13 0.065R 0.005
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 7.5 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 400 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
175W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
Seme LAB
Seme LAB



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