Home >> D1047 Search >> STMicroelectronics D1047 Datasheet

D1047 Datasheet

High power NPN epitaxial planar bipolar transistor

No Preview Available !

D1047 pdf
2SD1047
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 140 V
Typical ft = 20 MHz
Fully characterized at 125 oC
Application
Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SD1047
April 2011
Marking
2SD1047
Package
TO-3P
Doc ID 018729 Rev 1
Packaging
Tube
1/10
www.st.com
10
STMicroelectronics
STMicroelectronics



   PDF Click to Download PDF File

   PDF View for Mobile





Related Start with D104*

[ D1046 Sanyo Semicon Device ]     [ D1047 Sanyo Semicon Device ]     [ D1047 STMicroelectronics ]     [ D1048 Sanyo Semiconductor ]     [ D10 STMicroelectronics ]     [ D1000 Renesas ]     [ D1001 Renesas ]     [ D1001UK Seme LAB ]     [ D1002UK Seme LAB ]     [ D1003UK Seme LAB ]     [ D1004 Seme LAB ]     [ D10040180GT PDI ]     [ D10040180GTH PDI ]     [ D10040200GT PDI ]    


Searches related to D1047 part

Find Chips CBC RS online RUTRONIK 24
Component Distributors NexGen Digital Richardson RFPD ICC
Beyond Components NAC PEI-Genesis Powell Electronics
TME Ameya 360 Power & Signal Datasheets360
Freelance Electronics Sager Electronics Terminals & Connectors TTI

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z
@ 2014 :: DatasheetsPDF.com :: Semiconductors Datasheet Search & Download Site